1

GaN: Processing, defects, and devices

Year:
1999
Language:
english
File:
PDF, 2.84 MB
english, 1999
6

Wet chemical etching survey of III-nitrides

Year:
1997
Language:
english
File:
PDF, 350 KB
english, 1997
22

Ion implantation doping and isolation of GaN

Year:
1995
Language:
english
File:
PDF, 234 KB
english, 1995
23

Ion-implanted GaN junction field effect transistor

Year:
1996
Language:
english
File:
PDF, 330 KB
english, 1996
33

Transmission Electron Microscopy of Be Implanted Si-Doped GaAs

Year:
2000
Language:
english
File:
PDF, 264 KB
english, 2000
35

Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies

Year:
1997
Language:
english
File:
PDF, 748 KB
english, 1997
38

A review of junction field effect transistors for high-temperature and high-power electronics

Year:
1998
Language:
english
File:
PDF, 284 KB
english, 1998
39

Progress towards ultra-wideband AlGaN/GaN MMICs

Year:
1999
Language:
english
File:
PDF, 116 KB
english, 1999
40

Preface

Year:
2000
Language:
english
File:
PDF, 48 KB
english, 2000
46

C implantation and surface degradation of InGaP

Year:
1996
Language:
english
File:
PDF, 759 KB
english, 1996
49

A survey of ohmic contacts to III-V compound semiconductors

Year:
1997
Language:
english
File:
PDF, 79 KB
english, 1997